PART |
Description |
Maker |
SST39VF512 SST39VF512-70-4C-NH SST39VF010 SST39VF0 |
512 Kbit/1 Mbit (x8) multi-purpose flash From old datasheet system (SST39VFxxx / SST39LFxxx) 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash x8 Flash EEPROM
|
SST[Silicon Storage Technology Inc] SST[Silicon Storage Technology, Inc]
|
SST25VF020 |
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Spi Serial Flash
|
SST
|
NAND01GW4A2CZB1 NAND01GW4A2AZB1T NAND512R3A0AN1E N |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆,256兆,512兆位千兆位(x8/x1628 Byte/264字的页面.8V/3V,NAND闪存芯片
|
意法半导 STMicroelectronics N.V.
|
S79FL256S |
256 Mbit (32 MB)/512 Mbit (64 MB), 3 V, Dual-Quad SPI Flash
|
Cypress Semiconductor
|
M36P0R9060E0 |
512 Mbit Flash memory 64 Mbit (Burst) PSRAM
|
Numonyx
|
CY7C1354CV25-166AXC CY7C1356CV25-166AXC CY7C1354CV |
9-Mbit (256 K 36/512 K 18) Pipelined SRAM with NoBLArchitecture 9-Mbit (256 K × 36/512 K × 18) Pipelined SRAM with NoBL Architecture
|
Cypress Semiconductor
|
M39P0R9080E0ZAD M39P0R9080E0ZADE M39P0R9080E0ZADF |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 256 Mbit Low Power SDRAM, 1.8V Supply, Multi-Chip Package
|
Numonyx B.V
|
M36P0R9060E0 M36P0R9060E0ZACE M36P0R9060E0ZACF |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package
|
Numonyx B.V
|
DD28F032SA DD28F032SA-080 DD28F032SA-070 DD28F032S |
32-MBIT (2 MBIT X 16/ 4 MBIT X 8) FlashFile MEMORY 32-MBIT (2 MBIT X 16, 4 MBIT X 8) FlashFileMEMORY 32-MBIT (2 MBIT X 16, 4 MBIT X 8) FlashFile MEMORY 4M X 8 FLASH 12V PROM, 100 ns, PDSO56
|
Intel Corporation Intel Corp. PROM Intel, Corp.
|
CY62157EV18 |
8-Mbit (512 K x 16) Static RAM
|
Cypress Semiconductor
|
CY7C1387D-167AXCT |
18-Mbit (512 K 36/1 M 18) Flow-Through SRAM
|
Cypress
|
HYB39S512400AE-7.5 HYB39S512800AE-7.5 HYB39S512160 |
512-Mbit Synchronous DRAM
|
Qimonda AG
|